advanced power n-channel insulated gate electronics corp. bipolar transistor features v ces high speed switching i c low saturation voltage v ce(sat),typ. =1.8v@i c =20a rohs compliant product absolute maximum ratin g s notes: 1.pulse width limited by max. junction temperature . thermal data symbol rthj-c rthj-a electrical characteristics@ t j =25 o c(unless otherwise specified) symbol min. typ. max. units i ges --+ 100 na i ces - - 25 ua v ce(sat) - 1.8 2.5 v v ce(sat) - 2 2.7 v v ge(th) 2-6v q g - 100 160 nc q ge -24- nc q gc -40- nc t d(on) -50- ns t r -20- ns t d(off) - 135 - ns t f - 190 380 ns e on - 0.3 - mj e off - 0.9 - mj c ies - 3400 5440 pf c oes -75- pf c res -50- pf data and specifications subject to change without notice v ge =15v, i c =35a v 600 40 160 /w w value 5 a parameter reverse transfer capacitance rise time fall time turn-off delay time input capacitance turn-off switching loss turn-on switching loss gate-to-emitter leakage current v ce =30v AP20GT60I symbol v ces 600v 20a rating collector-emitter voltage units rohs-compliant product /w parameter 25 -55 to 150 150 storage temperature range v test conditions thermal resistance junction-case v ge i c @t c =25 o c collector current gate-emitter voltage a + 20 units v ge =0v v ce =480v, i c =20a, v ge =15v, r g =5 ? , inductive load turn-on delay time gate-emitter charge collector-emitter saturation voltage collector-emitter leakage current gate threshold voltage collector-emitter saturation voltage total gate charge gate-collector charge a v ce =600v, v ge =0v v ge =15v thermal resistance junction-ambient v ce =v ge , i c =250ua v ge =15v, i c =20a v ge =+ 20v, v ce =0v parameter t j t stg operating junction temperature range i c @t c =100 o c collector current 20 p d @t c =25 o c maximum power dissipation i cm 201105102 v cc =480v pulsed collector current 1 1 output capacitance f=1.0mhz 65 i c =20a g c e g c e to-220cfm(i)
AP20GT60I fig 1. typical output characteristics fig 2. typical output characteristics fig 3. typical saturation voltage fig 4. typical collector- emitter voltage characteristics v.s. junction temperature -- fig 5. gate threshold voltage fi g 6. t y pical capacitance characterisitics v.s. junction temperature 2 0 40 80 120 160 200 0 4 8 12 16 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v t c =25 o c 1 1 2 2 3 3 0 40 80 120 160 junction temperature ( o c) v ce(sat) , saturation voltage(v) i c =40a i c =20a v ge =15v 0 0.4 0.8 1.2 1.6 -50 0 50 100 150 junction temperature ( o c ) normalized v ge(th) (v) 0 40 80 120 160 200 02468 v ce , collector-emitter voltage (v) i c , collector current(a) v ge =15v t c =25 0 1000 2000 3000 4000 5000 1 5 9 13172125293337 v ce , collector-emitter voltage (v) capacitance (pf) f =1.0mh z c ies c oes c res t c =150 0 40 80 120 160 200 048121620 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v t c =150 o c i c =1ma
AP20GT60I fig7. power dissipation vs. junction fig 8. effective transient thermal temperature impedance fig 9. saturation voltage vs. v ge fig 10. saturation voltage vs. v ge fig 11. gate charge characterisitics fig 12. turn-off soa 3 0 5 10 15 20 0 4 8 12 16 20 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) i c =60a 40 a 20 a t c =25 o c 0 5 10 15 20 0 4 8 12 16 20 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) i c =60a 40 a 20 a t c = 150 o c 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 5 10 15 20 25 30 0 25 50 75 100 125 150 junction temperature ( ) power dissipation (w) 0 4 8 12 16 0 20 40 60 80 100 120 q g , gate charge (nc) v ge , gate -emitter voltage (v) i c =20a v cc =480v 1 10 100 1000 0.1 1 10 100 1000 10000 v ce , collector-emitter voltage(v) i c , peak collector current(a) safe operating area v ge =15v t c =125 o c
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